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| CMKT2907A ULTRAminiTM SURFACE MOUNT DUAL PNP SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-363 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA The CENTRAL SEMICONDUCTOR CMUT2907A type is a Dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAminiTM surface mount package, designed for small signal general purpose and switching applications. Marking Code is K07. UNITS V V V mA mW C C/W 60 60 5.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125C VCE=30V, VBE=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA MIN MAX 10 10 50 UNITS nA A nA V V V V V V V 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 50 300 R0 ( 9 -October 2001) Central SYMBOL fT Cob Cib ton td tr toff ts tf TM Semiconductor Corp. CMKT2907A ULTRAminiTM SURFACE MOUNT DUAL PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS: Continued TEST CONDITIONS VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MECHANICAL OUTLINE - SOT-363 MIN 200 MAX 8.0 30 45 10 40 100 80 30 UNITS MHz pF pF ns ns ns ns ns ns TR2 LEAD CODE: TR1 1) TR1 2) TR1 3) TR2 4) TR2 5) TR2 6) TR1 Emitter Base Collector Emitter Base Collector R0 ( 9 -October 2001) |
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